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Updated: May 11, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

Transistores de película delgada ambipolares y circuitos de inversor basados en heterouniones bicapa de dimensión

Sujin Baek1, Suhyeon Kim1, Hye Young Lee2

  • 1Department of Electrical Engineering, Sookmyung Women's University, Seoul, 04312, Republic of Korea.

Scientific reports
|February 19, 2026
PubMed
Resumen

Los investigadores desarrollaron un método más simple para fabricar circuitos complementarios utilizando disulfuro de molibdeno (MoS2) y nanotubos de carbono de pared simple (SWCNT). Este enfoque permite la producción escalable de dispositivos electrónicos avanzados sin pasos de patrón complejos.

Palabras clave:
transistor ambipolarcircuito similar a un complementarioimpresión por inyección de tintaheterounión de dimensión mixtaelectrónica impresa

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