Video Experimental Relacionado
Updated: Feb 21, 2026

09:43
Transmission of Multiple Signals through an Optical Fiber Using Wavefront Shaping
Published on: March 20, 2017
10.4K
Arquitectura ultracompacta y de banda ancha basada en divisor de potencia de modo arbitrario a modo único para la
Optics express
|February 20, 2026
Resumen
Desarrollamos una nueva arquitectura de chips fotónicos utilizando divisores de potencia de modo arbitrario a modo único (ASPD) para el control flexible de los modos de luz. Este diseño compacto simplifica el enrutamiento y la conversión de señales multimodo, allanando el camino para circuitos fotónicos avanzados.
Área de la Ciencia:
- La fotónica es la fotónica.
- La óptica integrada es una óptica integrada.
- Las comunicaciones ópticas de las comunicaciones ópticas.
Sus antecedentes:
- Los sistemas fotónicos multimodo requieren una manipulación de modo sofisticada para obtener funcionalidades avanzadas.
- Los métodos existentes para la conversión de modo y el enrutamiento pueden ser complejos y voluminosos.
Objetivo del estudio:
- Proponer y demostrar una arquitectura versátil en el chip para la manipulación multimodo flexible.
- Aprovechar los divisores de potencia de modo arbitrario a modo único (ASPD) para simplificar la conversión de modo y el enrutamiento.
Principales métodos:
- ASPDs ultracompactos diseñados utilizando rejillas de longitud de onda inferior y algoritmos de optimización inteligentes.
- Se configuraron dos unidades ASPD en cascada en una estructura similar al interferómetro de Mach-Zehnder con componentes estándar de modo único.
- Validación experimental de la arquitectura para la conversión y conmutación de modos.
Principales resultados:
- Huellas alcanzadas por debajo de 9.5 μm para modos de orden inferior (TE0-TE3) con pérdidas excesivas por debajo de 0.35 dB en un ancho de banda de 300 nm.
- Ancho de banda de 500 nm (1300-1800 nm) demostrado en todo el registro para ASPD TE0 / TE1 con <0,15 dB de pérdida excesiva.
- Mostró escalabilidad a modos de orden superior (TE4-TE7) con huellas compactas y un excelente rendimiento.
Conclusiones:
- La arquitectura propuesta basada en ASPD ofrece una solución compacta, escalable y flexible para circuitos integrados fotónicos multimodo.
- La descomposición directa de los modos de orden superior simplifica el enrutamiento y reduce la necesidad de complejos elementos multimodo.
- Esta plataforma ofrece una ruta prometedora hacia sistemas fotónicos multimodo reconfigurables.
Videos de Conceptos Relacionados
Voltage Dividers
1.4K
In electrical circuits, resistors can be connected in series, sequentially linked one after the other. In a series configuration, the same current flows through each resistor. Ohm's law is a fundamental principle to understand the behavior of resistors in series. It expresses the voltage across these resistors in terms of the current and resistance.
Kirchhoff's voltage law implies that the sum of the voltages across the resistors in series equals the source voltage. This means that the current...
Kirchhoff's voltage law implies that the sum of the voltages across the resistors in series equals the source voltage. This means that the current...
1.4K
Design Example: Capacitance Multiplier Circuit
1.6K
In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
1.6K
MOSFET: Enhancement Mode
872
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
872
Bus Impedance Matrix
542
Calculating subtransient fault currents for three-phase faults in an N-bus power system involves using the positive-sequence network. When a three-phase short circuit occurs at a specific bus, the analysis uses the superposition method to evaluate two separate circuits.
In the first circuit, all machine voltage sources are short-circuited, leaving only the prefault voltage source at the fault location. The positive-sequence bus impedance matrix can be determined by solving the nodal equations,...
In the first circuit, all machine voltage sources are short-circuited, leaving only the prefault voltage source at the fault location. The positive-sequence bus impedance matrix can be determined by solving the nodal equations,...
542
Maximum Power Transfer
976
Numerous practical applications within engineering disciplines, such as telecommunications, necessitate optimizing power delivery to a connected load. This pursuit, however, entails inherent internal losses, which can either equal or exceed the power supplied to the load. The Thevenin equivalent circuit is helpful in finding the maximum power a linear circuit can deliver to a load. It is assumed in this context that the load resistance can be adjusted.
By substituting the entire circuit with...
By substituting the entire circuit with...
976
MOSFET: Depletion Mode
904
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
904

