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Updated: Feb 24, 2026

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Memistores de MoOx/Al2O3 de Modo Dual con Capacidad de Conmutación Ultraestable para Computación de Depósito de Alta

Shaojie Fan1, Yuqing Fan1, Fang Wang1

  • 1State Key Laboratory of Crystal Materials, School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384, P. R. China.

The journal of physical chemistry letters
|February 23, 2026
PubMed
Resumen

Este estudio presenta memistores integrados digitales-analoógicos novedosos para computación neuromórfica. Estos dispositivos emulan sinapsis artificiales y logran una alta precisión en tareas de reconocimiento facial.

Palabras clave:
memistorcomputación neuromórficasinapsis artificialcomputación de depósitoreconocimiento facialAg/MoO<sub><i>x</i></sub>/Al<sub>2</sub>O<sub>3</sub>/TiN

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