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Mecanismos de Conmutación Sintonizables en Uniones de Túnel Basadas en HfZrO₂ para Arreglos Sinápticos de Alto

Jiwon You¹, Jeong-Han Kim², Minsuk Song³

¹Department of AI Semiconductor Engineering, Hanyang University, Seoul, Republic of Korea.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)

|February 23, 2026

Resumen

Los arreglos optimizados de uniones de túnel ferroeléctricas (FTJ) con conmutación híbrida exhiben una alta resistencia a la electro-tunelización (TER) para una computación neuromórfica eficiente. Estos arreglos escalables permiten memoria no volátil avanzada y hardware de IA de bajo consumo energético.

Área de la Ciencia:

Ciencia de Materiales
Física del Estado Sólido
Ingeniería de Dispositivos

Sus antecedentes:

Las uniones de túnel ferroeléctricas (FTJ) son componentes clave para la memoria no volátil de próxima generación y la computación neuromórfica.
La integración escalable de FTJ en arreglos grandes es esencial para aplicaciones prácticas.
El control de los mecanismos de conmutación en FTJ es crucial para optimizar el rendimiento del dispositivo.

Objetivo del estudio:

Investigar la ingeniería de materiales y estructuras para arreglos FTJ híbridos escalables.
Manipular sistemáticamente las concentraciones de vacantes de oxígeno en películas de HfZrO2 (HZO).
Lograr modos operativos distintos y mejorar el rendimiento de la resistencia a la electro-tunelización (TER).

Principales métodos:

Selección estratégica de electrodos inferiores (Mo, Mo/Ti) y capas interfaciales (ZrO2).
Manipulación controlada de las concentraciones de vacantes de oxígeno (VO) en películas de HfZrO2.
Fabricación de un arreglo FTJ de 42x42 e integración en una arquitectura de Transformador de Visión (ViT).

Principales resultados:

Se lograron tres modos operativos: ferroeléctrico puro, modulado por defectos e híbrido.
Se demostraron altas relaciones TER: ~10^2 con Mo, >10^4 con electrodos inferiores de Mo/Ti.
Los arreglos FTJ fabricados mostraron una modulación de conductancia multinivel uniforme y operaciones VMM estables en ViT.

Conclusiones:

Los arreglos FTJ de conmutación híbrida diseñados con precisión ofrecen una plataforma escalable y energéticamente eficiente para sistemas avanzados de memoria y neuromórficos.
La optimización de materiales y estructuras es fundamental para lograr dispositivos FTJ de alto rendimiento.
Los arreglos FTJ integrados permiten cálculos de IA estables y eficientes, superando los desafíos de variabilidad del dispositivo.

Palabras clave:

HfZrO2 uniones de túnel ferroeléctricas conmutación híbrida arreglo de barrado a gran escala vacantes de oxígeno transformador de visión

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