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Memistores de perovskita totalmente inorgánicos y sostenibles que permiten el aprendizaje sináptico y la emulación

Jnanaprakash Dash¹, Sandaap Sathyanarayana¹, Muhammed Sahad E¹

¹eNDR Laboratory, School of Physics, IISER Thiruvananthapuram, Trivandrum, Kerala, India.

Small (Weinheim an der Bergstrasse, Germany)

|February 25, 2026

Resumen

Desarrollamos un dispositivo memristivo de perovskita sin plomo que utiliza Cs2AgBiBr6 (CABB) para la electrónica sostenible. Este material ecológico demuestra una conmutación resistiva confiable y emula funciones sinápticas para la computación inspirada en el cerebro.

Área de la Ciencia:

Ciencia de los materiales
Física del estado sólido
Computación neuroinspirada

Sus antecedentes:

Las perovskitas de haluro sin plomo son cruciales para la electrónica sostenible de próxima generación y las aplicaciones neuromórficas.
Cs2AgBiBr6 (CABB) es una perovskita doble estable, no tóxica y totalmente inorgánica con potencial para la fabricación de dispositivos avanzados.
Los dispositivos memristivos son componentes clave para la computación de bajo consumo y el hardware de inteligencia artificial.

Objetivo del estudio:

Fabricar y caracterizar un dispositivo memristivo utilizando películas delgadas de Cs2AgBiBr6 (CABB).
Investigar el mecanismo de conmutación resistiva y las capacidades de emulación sináptica de los dispositivos basados en CABB.
Evaluar el potencial de CABB para la computación neuromórfica y las aplicaciones cognitivas.

Principales métodos:

Deposición de película delgada de Cs2AgBiBr6 (CABB) mediante cristalización inducida por enfriamiento.
Fabricación de estructuras memristivas ITO/CABB/Au.
Caracterización eléctrica que incluye mediciones de I-V, espectroscopía de impedancia y espectroscopía de barrido de túnel (STS).
Evaluación de comportamientos sinápticos (por ejemplo, EPSC, PPD, LTP/LTD) y reconocimiento de patrones utilizando redes neuronales de picos.

Principales resultados:

Se observó una conmutación resistiva analógica reproducible con histéresis bien definida en dispositivos ITO/CABB/Au.
Se confirmó el mecanismo de conmutación filamentaria, impulsado por la migración reversible de iones Ag+.
Emulación exitosa de funciones sinápticas esenciales y demostración de plasticidad sintonizable.
Alto porcentaje de acierto (>95%) en el reconocimiento de patrones del conjunto de datos MNIST utilizando redes neuronales de picos entrenadas.
Evidencia de aprendizaje adaptativo y memoria asociativa, incluido el condicionamiento pavloviano.

Conclusiones:

Cs2AgBiBr6 (CABB) es un material de perovskita prometedor y ecológico para aplicaciones memristivas.
Los dispositivos basados en CABB exhiben una conmutación resistiva confiable y funcionalidades neuromórficas versátiles.
La multifuncionalidad del material apoya el desarrollo de hardware inspirado en el cerebro compacto, energéticamente eficiente y sostenible.

Palabras clave:

aprendizaje cognitivo AFM conductor perovskita sin plomo memristor conmutación resistiva

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