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Updated: Feb 27, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Selección programable de fase entre polimorfos altermagnéticos y no centrosimétricos de MnTe sobre InP mediante

An-Hsi Chen1, Parul R Raghuvanshi1, Jacob Cook1,2

  • 1Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States.

ACS applied materials & interfaces
|February 25, 2026
PubMed
Resumen

No abstract available in PubMed .

Palabras clave:
altermagnetismoantiferromagnetismomagnetismoepitaxia de haz molecular (MBE)no centrosimétricosíntesis programablebloqueo espín-momentoespintrónica

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