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Updated: Feb 27, 2026

10:31
Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
Published on: November 24, 2016
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Selección programable de fase entre polimorfos altermagnéticos y no centrosimétricos de MnTe sobre InP mediante
An-Hsi Chen1, Parul R Raghuvanshi1, Jacob Cook1,2
1Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States.
ACS applied materials & interfaces
|February 25, 2026
Resumen
No abstract available in PubMed .
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