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Avances recientes en HEMT de GaN con tapa de diamante para aplicaciones de RF

Yuanmeng Xiang1, Mei Wu1, Haolun Sun1

  • 1National Engineering Research Center of Wide Band-Gap Semiconductor, Faculty of Integrated Circuit, Xidian University, Xi'an 710126, China.

Nanomaterials (Basel, Switzerland)
|February 26, 2026
PubMed
Resumen

No abstract available in PubMed .

Palabras clave:
HEMT de GaNTBRpelícula de diamantegestión térmica

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