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Moduladores integrados heterogéneamente de tantalate de litio sobre nitruro de silicio para comunicaciones de alta

Jiachen Cai^1,2, Alexander Kotz³, Hugo Larocque²

¹State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China.

Nature communications

|March 1, 2026

Resumen

El tantalate de litio integrado en circuitos fotónicos de nitruro de silicio permite la transmisión de datos de alta velocidad. Esta novedosa plataforma ofrece un rendimiento electro-óptico superior para aplicaciones fotónicas avanzadas.

Área de la Ciencia:

Fotónica y Ciencia de Materiales
Óptica Integrada
Electro-óptica

Sus antecedentes:

El efecto Pockels es crucial para los moduladores integrados ultrabanda ancha.
El tantalate de litio (LT) ofrece ventajas sobre el niobato de litio, incluida una mejor fotostabilidad y un mayor umbral de daño óptico.
La integración heterogénea es clave para combinar las propiedades del material con los procesos de fabricación establecidos.

Objetivo del estudio:

Demostrar la integración heterogénea a escala de oblea de películas de tantalate de litio en circuitos fotónicos integrados de nitruro de silicio.
Evaluar el rendimiento de estos dispositivos integrados para la modulación de datos de alta velocidad.
Establecer LT-on-SiN como una plataforma viable para la fotónica de RF y las interconexiones.

Principales métodos:

Integración heterogénea a escala de oblea de tantalate de litio de película delgada sobre nitruro de silicio.
Fabricación de circuitos fotónicos integrados de nitruro de silicio de baja pérdida.
Caracterización de pérdidas ópticas, voltaje de media onda y ancho de banda de modulación.
Experimentos de transmisión de datos de alta velocidad utilizando señales PAM4 y 16-QAM.

Principales resultados:

Se lograron pérdidas ópticas bajas de aproximadamente 14,2 dB/m.
Se demostraron dispositivos con un voltaje de media onda de 6 V y anchos de banda de modulación de hasta 100 GHz.
Se transmitieron con éxito señales PAM4 y 16-QAM a velocidades de datos netas de 333 Gbit/s y 581 Gbit/s, respectivamente.

Conclusiones:

El tantalate de litio sobre nitruro de silicio es una plataforma prometedora para circuitos fotónicos integrados de alto rendimiento.
Esta integración combina los beneficios de las guías de onda de nitruro de silicio con la respuesta electro-óptica ultrarrápida del tantalate de litio.
La plataforma es adecuada para aplicaciones en fotónica de RF, interconexiones ópticas y procesamiento de señales analógicas.

Palabras clave:

fotónica tantalate de litio nitruro de silicio moduladores alta velocidad circuito integrado fotónica de RF transmisión de datos

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