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Transistores orgánicos de baja tensión en plástico que incluyen aislantes de puertas de alta dieléctrica constante
Dimitrakopoulos1, Purushothaman, Kymissis
1IBM Research Division, T. J. Watson Research Center, Post Office Box 218, Yorktown Heights, NY 10598, USA.
Science (New York, N.Y.)
|February 5, 1999
Resumen
Los investigadores desarrollaron transistores de efecto de campo de puerta aislada orgánica de pentaceno de alto rendimiento (IGFET) utilizando aislantes de puerta de óxido metálico amorfo. Estos dispositivos logran una alta movilidad y modulación de corriente a bajos voltajes de funcionamiento, incluso en sustratos de plástico.
Área de la Ciencia:
- La electrónica orgánica es la electrónica orgánica.
- Física de los semiconductores física de los semiconductores.
- Ciencia de los materiales ciencia de los materiales.
Sus antecedentes:
- La movilidad del efecto de campo en los transistores orgánicos a menudo está limitada por las interacciones del portador de carga con los estados de trampa.
- La optimización de los aislantes de puerta es crucial para mejorar el rendimiento del dispositivo en los transistores orgánicos de efecto de campo.
Objetivo del estudio:
- Para interpretar la dependencia del sesgo de la puerta de la movilidad del efecto de campo en los transistores de efecto de campo de la puerta aislados basados en pentaceno (IGFET).
- Para diseñar y fabricar IGFET de alto rendimiento utilizando aislantes de puerta de óxido metálico amorfo.
- Para lograr una alta movilidad y modulación de corriente a bajos voltajes de funcionamiento.
Principales métodos:
- Interpretando las interacciones del portador de carga con los niveles de trampa localizados en la brecha de la banda.
- Diseño y fabricación de IGFET basados en pentaceno con aislantes de puerta de óxido metálico amorfo.
- Caracterizar el rendimiento del dispositivo, incluida la movilidad y la modulación de corriente, a bajas tensiones de funcionamiento.
Principales resultados:
- Se logra una movilidad de efecto de campo superior a 0,3 cm2/Vs.
- Modulación de corriente demostrada de 105,5.
- Dispositivos operados a voltajes tan bajos como 5 voltios, significativamente más bajos que los informes anteriores.
- Fabricados IGFET orgánicos de alto rendimiento sobre sustratos plásticos transparentes utilizando un proceso a temperatura ambiente.
Conclusiones:
- Comprender las interacciones portador de carga-trampa es clave para mejorar el rendimiento de IGFET.
- Los aislantes de puerta de óxido metálico amorfo permiten IGFET orgánicos de alto rendimiento con bajos voltajes de funcionamiento.
- Los procesos de fabricación a temperatura ambiente facilitan el desarrollo de electrónica orgánica flexible y de alto rendimiento.
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