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Updated: Jul 21, 2026

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

スピン分裂が二次元システムの金属の振る舞いに与える影響

Papadakis1, De Poortere EP, Manoharan

  • 1Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA. Institut fur Technische Physik III, Universitat Erlangen-Nurnberg, Staudtstrasse 7, D-91058 Erlangen, Germany.

Science (New York, N.Y.)
|March 26, 1999
PubMed
まとめ

ガリウムアルセニド量子井戸における金属の振る舞いは,収束ポテンシャル対称性とバレンスの帯のスピン分裂に依存する. これらの要因は,磁場なしの抵抗力の温度依存に影響を与える.

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