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溶解性があり空気に安定した有機半導体で,電子の移動性が高い
1Bell Laboratories-Lucent Technologies, New Jersey 07974, USA. hek@lucent.com
Nature
|April 13, 2000
まとめ
研究者は,溶液鋳型トランジスタ用の新しい有機n型半導体を開発しました. このブレークスルーにより,溶液加工された層のみを使用して,低電力,高速の補完回路を作成することができます.
科学分野:
- マテリアルサイエンス 材料科学
- オーガニック・エレクトロニクス
- 半導体物理学 半導体物理学
背景:
- 有機半導体は,無機材料と比較して,低コストと柔軟性などの利点を提供しています.
- 低電力電子機器に不可欠な補完回路には,n型およびp型の半導体が必要である.
- 安定した,高性能な有機n型半導体の開発は,依然として大きな課題です.
研究 の 目的:
- 新しい有機n型半導体材料を設計する.
- 溶液鋳型のnチャネルフィールド効果トランジスタ (FET) の製造と特徴付け.
- 完全に溶液処理された補完インバーター回路を実証するために.
主な方法:
- ナフタレンテトラカルボキシルジミド誘導体の結晶学工学.
- 溶液鋳造技術を用いたnチャンネルFETの製造.
- nチャネルFETと溶液埋蔵のpチャネルFETを統合して,インバーター回路を形成する.
主要な成果:
- 環境条件下で溶液鋳型 n チャンネル FET の有望な性能を達成しました.
- 完全に溶液で堆積された活性層を備えた機能的な補完的なインバーター回路を実証しました.
- エンジニアリングされた材料は,以前の有機n型半導体と比較して,電子の移動性と安定性が向上しています.
結論:
- 開発されたナフタレンテトラカルボキシルジミド誘導体は,高性能有機n型半導体にとって有効な候補である.
- この研究は,完全にソリューション処理された,柔軟な,低電力電子回路への道を開く.
- このアプローチは,他の補完的な回路設計に拡張され,有機電子工学を進歩させることができます.
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