ナノチューブの交差点が交差しています

Fuhrer¹, Nygard, Shih

¹Department of Physics, University of California at Berkeley and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA. Department of Physics and Center for Theoretical Physics, Seoul National University.

Science (New York, N.Y.)

|April 25, 2000

まとめ

研究者は,交差した単一壁の炭素ナノチューブを使用して,交差点を製造しました. 彼らは,金属半導体結合が,電子機器にとって極めて重要なショットキーの障壁を修正することを発見しました.

科学分野:

マテリアルサイエンス材料科学
凝縮物質物理学凝縮物質物理学
ナノテクノロジーナノテクノロジー

背景:

シングルウォールカーボンナノチューブ (SWCNT) は,ナノ電子機器のための有望な材料です.
異なるタイプのSWCNT間の接続の電気的性質を理解することは,デバイス製造に不可欠です.

研究の目的:

交差した単一壁の炭素ナノチューブによって形成された接点を製造し,特徴づけること.
メタリック・メタリック (MM),メタリック・セミコンダクト (MS),セミコンダクト・セミコンダクト (SS) 接続の電気的性質を調査する.
MSの交差点におけるショットキー・バリアの形成を分析する.

主な方法:

電気コンタクトを持つ交叉SWCNT接続の製造.
個々のSWCNTを金属 (M) または半導体 (S) として,2端の伝導度測定を使用して識別する.
4つの端末の測定を使用してMM,MS,SSの接点の特徴付け.
交差点の行動を分析するために,2つ,3つの端末の実験を使用します.

主要な成果:

MMとSSの交差点では,約0.1e^2/hの高い伝導度を示した.
MSの交差点では,Schottkyの障壁の形成により,矯正行動を示した.
MSの接点にある半導体ナノチューブは,隣接する金属ナノチューブによって枯渇した.

結論:

交差したSWCNT接続は制御可能な製造が可能である.
SWCNTの結合の電気的性質は,関連するナノチューブの種類 (MM,MS,SS) に依存しています.
MS結合は,Schottkyの障壁を修正する形で形成され,ナノエレクトロニクスにおけるダイオード応用の可能性を示しています.

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