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Updated: Jul 20, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
09:20

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Published on: December 7, 2015

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炭素ナノチューブの可逆電機特性については,ローカルプローブ操作で調べられます

Tombler1, Zhou, Alexseyev

  • 1Department of Chemistry, Stanford University, California 94305, USA.

Nature
|June 24, 2000
PubMed
まとめ

機械的変形は,単一壁の炭素ナノチューブ (SWNTs) に著しく影響を及ぼし,その電気伝導性を低下させます. この研究は,原子力顕微鏡による操作が,sp3結合形成により,どのように可逆的な変化を引き起こすかを明らかにしています.

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