閉じ込められたイオンを用いた非相関性のない量子メモリ

D Kielpinski¹, V Meyer, M A Rowe

¹Time and Frequency Division, National Institute of Standards and Technology, Boulder, CO 80305, USA. davidk@boulder.nist.gov

Science (New York, N.Y.)

|March 10, 2001

まとめ

研究者らは,2つのイオンを使用して,デコヘレンスのない量子メモリを作成しました. この量子メモリは,環境の騒音から量子情報を保護することによって,量子ビットの記憶時間を大幅に延長します.

科学分野:

量子情報科学とは,量子情報科学である.
原子物理原子物理学
量子コンピューティング

背景:

量子情報は,記憶するために強力なメモリを必要とします.
環境の騒音が相変化を引き起こし,量子ビットの貯蔵時間を制限します.
シングルイオン量子ビットは,デコエレンスに敏感です.

研究の目的:

単一の量子ビットのための非相関性のない量子記憶を実証する.
量子情報を環境の相変化から保護するためです.
量子情報の保存時間を向上させるため.

主な方法:

単一の量子ビットを2つの閉じ込められた9Be+イオンによる脱コエレンスフリーサブスペース (DFS) にエンコードする.
DFS を使用して,環境の相互作用から量子ビットを保護します.
周囲環境およびエンジニアリングによる騒音条件下で量子ビット貯蔵時間を測定する.

主要な成果:

デコヘレンスのない量子記憶は,量子ビットの記憶時間を最大数列にわたって増加させた.
DFSへのエンコーディングは,量子ビットをフェーシングから効果的に保護しました.
量子ビットのエンコーディングプロセスは,可逆性があることが示されました.

結論:

2イオンシステムを用いた脱合性のない量子記憶は実現可能である.
量子ビットをDFSにエンコードすることは,環境騒音と戦うための実行可能な戦略です.
このアプローチは,量子情報保存の信頼性と持続時間を大幅に改善します.

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