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Updated: May 10, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

2次元の電子ガスにおける一貫した分岐フロー.

M A Topinka1, B J LeRoy, R M Westervelt

  • 1Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA.

Nature
|March 10, 2001
PubMed
まとめ

半導体ナノ構造における電子の流れは,スムーズな扇風機ではなく,枝分かれした糸を形成する. 量子点接触で観測されたこの発見は,将来の量子装置のための電子輸送に関する洞察を明らかにします.

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