シリコンの電荷結合装置における基本電荷の操作

A Fujiwara¹, Y Takahashi

¹Ntt Basic Research Laboratories, 3-1 Morinosata Wakamiya, Atsugi, Kanagawa 243-0198, Japan. afuji@aecl.ntt.co.jp

Nature

|March 30, 2001

まとめ

研究者らは,単一の元素電荷を操作するための新しいシリコンベースの装置を開発しました. この新しい電荷結合装置は,既存の単電子トンネル技術よりも,よりシンプルで,よりスケーラブルな代替案を提供します.

科学分野:

固体物理固体物理学
ナノエレクトロニクスナノエレクトロニクス
半導体デバイス半導体デバイス

背景:

電子機器の動作の究極の限界は,単一充電操作である.
既存の単電子トンネル装置は,これを行う能力があるが,製造は複雑である.
基本的な電荷の操作のために,よりシンプルでスケーラブルなデバイスが必要である.

研究の目的:

基本的な電荷を操作できる新しいタイプの装置を実証する.
大規模統合に適したデバイスを開発する.
最初のシリコンベースの単一電荷伝送装置を実現するために.

主な方法:

2つの密集したシリコンワイヤル-金属酸化物-半導体フィールド効果トランジスタ (MOSFET) を利用しています.
MOSFETチャネルに穴を作り貯蔵するスキームの開発.
MOSFET間の基本的な電荷レベルでのホール転送を実行します.

主要な成果:

2つのシリコンワイヤ-MOSFET間の基本的な電荷の操作と転送が成功していることが実証されました.
充電位置の正確なモニタリングを達成しました.
装置を25Kで操作し,充電結合装置としての機能を確認しました.

結論:

シリコンベースの新型単電荷伝送装置が実現しました.
このデバイスは,以前の技術と比較して,よりシンプルな製造プロセスとより良いスケーラビリティを提供します.
これは,ナノエレクトロニクスと単電荷操作の分野における重要な進歩を表しています.

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