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Updated: Jul 19, 2026

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment
08:48

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

Published on: November 9, 2015

ダイヤモンドの pn 接点からの紫外線放射.

S Koizumi1, K Watanabe, M Hasegawa

  • 1Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan. KOIZUMI.satoshi@nims.go.jp

Science (New York, N.Y.)
|June 9, 2001
PubMed
まとめ

研究者らは,ダイヤモンドの pn 接続を使用して紫外線発光ダイオードを開発しました. この装置は235ナノメートルで強い紫外線を放射し,これはダイヤモンド材料における自由エクシトンの再結合に起因する.

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