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Updated: Jun 24, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
09:20

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Published on: December 7, 2015

分子-ナノ結晶半導体インターフェースの間の長距離電子転送

E Galoppini1, W Guo, P Qu

  • 1Chemistry Department, Rutgers University, Newark, NJ 07102, USA.

Journal of the American Chemical Society
|July 18, 2001
PubMed
まとめ

No abstract available in PubMed .

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関連する概念動画

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...