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Updated: Jun 22, 2026

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結晶酸化物との半導体インターフェースにおける物理的構造と反転電荷

R A McKee1, F J Walker, M F Chisholm

  • 1Oak Ridge National Laboratory, Oak Ridge, TN 37831-6118, USA.

Science (New York, N.Y.)
|July 21, 2001
PubMed
まとめ

半導体上の結晶酸化物の原子レベルの制御は,電気的性質の正確な操作を可能にします. このブレークスルーにより,金属酸化物半導体デバイスに新しい無電荷インターフェースが作られ,固体エレクトロニクスの新たな道が開かれました.

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