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Updated: Jun 21, 2026

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Sputter Growth and Characterization of Metamagnetic B2-ordered FeRh Epilayers
Published on: October 6, 2013
化学的に誘発された磁気と磁気抵抗は,La{0.8}Sr{1.2}Mn{0.6}Rh{0.4}O{4}で示されています
P D Battle1, A M Bell, S J Blundell
1Inorganic Chemistry Laboratory, Chemistry Department, University of Oxford, South Parks Road, Oxford OX1 3QR, UK.
Journal of the American Chemical Society
|August 2, 2001
まとめ
La{0.8}Sr{1.2}Mn{0.6}Rh{0.4}O{4}における短距離磁気相互作用は,200 K未満の負磁気抵抗につながります. 適用された磁場はフェロ磁気順序を誘導し,最大50 Kまで持続します.
科学分野:
- 凝縮物質物理学 凝縮物質物理学
- マテリアルサイエンス 材料科学
- マグネチズム (磁気) とは
背景:
- K(2) NiF(4) のような複合酸化物における磁気相互作用を研究する.
- 磁気特性におけるマンガン (Mn) とロジウム (Rh) カチオンの役割を理解する.
研究 の 目的:
- La{0.8}Sr{1.2}Mn{0.6}Rh{0.4}O{4}の磁気行動を特徴づけるために
- 外部磁場が磁気秩序に及ぼす影響を調査する.
- ネガティブな磁気抵抗とスピンガラスの行動の背後にあるメカニズムを解明する.
主な方法:
- マグネトメトリーとミュオンスピンスペクトロスコーピー (μSR) を用いて,磁気相互作用を調査する.
- 磁場下での原子モーメントの順序を判別するための中性子 difraktion.
- 磁気抵抗を評価するための電気抵抗の測定.
主要な成果:
- 200K以下で観測された重要な短距離磁気相互作用.
- 負の磁気抵抗 (ρ/ρ0 ≈0.5 at 14 T, 108 K) は200 K未満で,負の磁気抵抗 (ρ/ρ0 ≈0.5 at 14 T, 108 K) は200 K未満で,負の磁気抵抗 (ρ/ρ0 ≈0.5 at 14 T, 108 K) は200 K未満で,負の磁気抵抗 (ρ/ρ0 ≈0.5 at 14 T, 108 K) は200 K以下で,負の磁気抵抗 (ρ/ρ0 ≈0.5 at 14 T, 108 K) は200 K以下で,負の磁気抵抗 (ρ/ρ0 ≈0.5 at 14 K) は200 K以下で,負の磁気抵抗 (ρ/ρ0 ≈0.5 at 14 T, 108 K) は200 K以下で,負の磁気抵抗 (ρ/ρ0 ≈0.5 at 14 K) は200 K以下で,負の磁気抵抗 (ρ/ρ0 ≈0.5 at 14 T, 108 K) は200 K以下である.
- 磁場によって誘発されたフェロマグネティック・オーダーリング (≈3.38(7) μB/Mn) は2Kで,5Tで50Kまで持続する.
- スピンガラスの振る舞いは,適用されたフィールドなしで20K以下で観察されました.
結論:
- 外部磁場は,この材料に長距離の鉄磁気秩序を誘導することができます.
- Rh3+は競合する磁気交換相互作用に影響を与え,磁気相変遷を制御する.
- 適用されたフィールドの下での電子帯域構造の変化は,誘導磁性オーダーリングに寄与する.
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