関連する実験動画

Updated: Jul 24, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
09:20

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Published on: December 7, 2015

テラスケール統合のためのシリコンナノ電子学の限界

J D Meindl1, Q Chen, J A Davis

  • 1School of Electrical and Computer Engineering, Microelectronics Research Center, Georgia Institute of Technology, Atlanta, GA 30332-0269, USA. james.meindl@mirc.gatech.edu

Science (New York, N.Y.)
|September 15, 2001
PubMed
まとめ

シリコン半導体技術は,テラスケール・インテグレーション (TSI) の巨大な可能性を秘め,チップ1つあたり1兆台以上のトランジスタを可能にします. これを実現するには,高度なダブルゲートトランジスタと,将来のナノエレクトロニクスの相互接続の課題を克服する必要があります.

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Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...