関連する実験動画

Updated: Jun 20, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

個々のドーパント原子とクラスターを高度にn型の大量Siで原子スケール画像化

P M Voyles1, D A Muller, J L Grazul

  • 1Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974, USA.

Nature
|April 27, 2002
PubMed
まとめ

研究者は,高度な顕微鏡を用いて,シリコン内の個々のアンチモニードーパント原子とクラスタを視覚化しました. この突破は,ドーパントの追加が,先進的な半導体デバイスの電荷キャリアの増加を阻止する理由を説明しています.

さらに関連する動画

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

3D Depth Profile Reconstruction of Segregated Impurities Using Secondary Ion Mass Spectrometry07:10

3D Depth Profile Reconstruction of Segregated Impurities Using Secondary Ion Mass Spectrometry

Published on: April 29, 2020

関連する概念動画

Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...