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関連する概念動画

Fermi Level Dynamics01:12

Fermi Level Dynamics

The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...

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関連する実験動画

Updated: Jul 4, 2026

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
10:32

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Published on: January 9, 2014

半導体マイクロカビティのピクセルとしての穴のソリトンは,半導体マイクロカビティのピクセルとして表示されます.

Stephane Barland1, Jorge R Tredicce, Massimo Brambilla

  • 1Institut Non Lineaire de Nice, 1361 Route des Lucioles, F-06560 Valbonne, France.

Nature
|October 18, 2002
PubMed
まとめ

研究者らは,半導体マイクロレゾナーにおける自己閉じ込めの穴ソリトンを実証した. これらの光学ソリトンは独立して制御され,小型化された全光学処理と再構成可能な光子装置の道を開くことができます.

さらに関連する動画

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars
08:02

Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars

Published on: February 11, 2020

関連する実験動画

Last Updated: Jul 4, 2026

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
10:32

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Published on: January 9, 2014

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars
08:02

Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars

Published on: February 11, 2020

科学分野:

  • 非線形光学は,非線形光学である.
  • 半導体物理学の物理
  • フォトニクス フォトニクスとは

背景:

  • 洞穴ソリトンは,非線形光学系における局所的な光構造である.
  • これまでの研究は,マクロスコープの空洞に焦点を当て,実用的な応用を制限していました.
  • 半導体ベースの空洞ソリトンは,小型化と速度のために望ましい.

研究 の 目的:

  • 半導体マイクロレゾナーにおける自己閉じ込めの穴ソリトンを実験的に実証する.
  • 電気ポンプと穴のソリトンの制御を達成するために.
  • 以前の観測における境界依存性の問題を克服するために.

主な方法:

  • 縦穴半導体マイクロレゾーナーを使用しています.
  • マイクロレゾナーを透明度を超えても,レーシングの値以下に電気的にポンプする.
  • 結果の解釈のために数値シミュレーションを使用します.

主要な成果:

  • 電気ポンプによる半導体マイクロレゾーナーにおける空洞ソリトンの生成に成功した.
  • 光学ソリトンの独立した書き込み,消去,操作の実証.
  • 洞穴の境界から独立した自己閉じ込めソリトンの観察.

結論:

  • キャビティ・ソリトンは,半導体マイクロレゾナーで生成され,制御することができます.
  • この作業により,実用的でミニチュア化された全光学デバイスの開発が可能になります.
  • この発見は,再構成可能な光子回路と全光信号処理のための新しい道を開く.