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関連する概念動画

Network Covalent Solids02:18

Network Covalent Solids

16.5K
Network covalent solids contain a three-dimensional network of covalently bonded atoms as found in the crystal structures of nonmetals like diamond, graphite, silicon, and some covalent compounds, such as silicon dioxide (sand) and silicon carbide (carborundum, the abrasive on sandpaper). Many minerals have networks of covalent bonds.
To break or to melt a covalent network solid, covalent bonds must be broken. Because covalent bonds are relatively strong, covalent network solids are typically...
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Crystal Field Theory - Octahedral Complexes02:58

Crystal Field Theory - Octahedral Complexes

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Crystal Field Theory
To explain the observed behavior of transition metal complexes (such as colors), a model involving electrostatic interactions between the electrons from the ligands and the electrons in the unhybridized d orbitals of the central metal atom has been developed. This electrostatic model is crystal field theory (CFT). It helps to understand, interpret, and predict the colors, magnetic behavior, and some structures of coordination compounds of transition metals.
CFT focuses on...
31.8K
Non-ohmic Devices00:51

Non-ohmic Devices

1.7K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.7K
P-N junction01:11

P-N junction

1.7K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.7K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.4K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.4K
Heterogeneous Catalysis01:22

Heterogeneous Catalysis

111
Heterogeneous catalysis involves a catalyst in a different phase from the reactants. It is a process where the catalyst and the reactants are in distinct phases, typically solid and gas or liquid.Most heterogeneous catalysts are metals, metal oxides, or acids. The list includes transition metals like iron (Fe), cobalt (Co), nickel (Ni), palladium (Pd), platinum (Pt), chromium (Cr), manganese (Mn), tungsten (W), silver (Ag), and copper (Cu). These metals possess partially vacant d orbitals that...
111

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Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates
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エピタキシアル・コア・シェル・コア・マルチシェル・ナノワイヤ・ヘテロ構造

Lincoln J Lauhon1, Mark S Gudiksen, Deli Wang

  • 1Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA.

Nature
|November 8, 2002
PubMed
まとめ

研究者は,化学蒸気堆積を用いた新しいシリコンとゲルマニウムコアシェルナノワイヤを開発しました. このブレークスルーにより,先端の電子・フォトニックデバイスの放射線組成とドーピング制御が可能になる.

科学分野:

  • マテリアルサイエンス 材料科学
  • ナノテクノロジー ナノテクノロジー
  • 固体物理 固体物理学

背景:

  • 半導体ヘテロ構造は,高度な電子機器や光子装置にとって極めて重要です.
  • ナノスケールビルディングブロックのインターフェイスを制御することは,デバイスの機能性にとって不可欠です.
  • ナノワイヤの半径組成とドーピング調節は,平面システムよりも調査が少ないままです.

研究 の 目的:

  • シリコンとゲルマニウムのコアシェルとマルチシェルのナノワイヤヘテロ構造を合成するために.
  • ナノワイヤの成長における放射線組成とドーピングコントロールを調査する.
  • 新しいデバイスのアプリケーションのためのこれらの構造の潜在能力を実証する.

主な方法:

  • ナノワイヤヘテロ構造を合成するための化学蒸気堆積 (CVD).
  • 本質的なシリコンおよびシリコン-シリコン酸化物コアシェルナノワイヤのボロン添加シリコンシェルの成長.
  • ゲルマーニウム-シリコンおよびシリコン-ゲルマーニウムコア・シェル構造のヘテロエピタキシアル成長.

主要な成果:

  • 比較的低い温度で,シリコン上のシリコンの殻のホモエピタキシを達成しました.
  • 結晶のGe-SiとSi-Geのコア・シェル構造のヘテロエピタキシアル成長が実証された.

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  • 高性能フィールド効果トランジスタを含む,コア・マルチシェル構造を成功して合成した.

    • 結論:

    • ナノワイヤの放射性ヘテロ構造の成長は,高度な材料を作成するための実行可能なアプローチです.
    • コア・シェル構造におけるバンドオフセットは,キャリア注入を制御することができます.
    • 開発された方法は,将来のナノワイヤベースの電子機器と光学機器の大きな可能性を秘めています.