炭素ナノチューブFETからの電気誘発光学放射
J A Misewich1, R Martel, Ph Avouris
1IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598-0218, USA.
Science (New York, N.Y.)
|May 6, 2003
まとめ
研究者らは,炭素ナノチューブフィールド効果トランジスタ (FET) からの偏光赤外線放射を観測した. この新しい装置は,電気バイアスを使って,効率的な電子穴再結合のための交差点を作成し,小さな光子装置の道を開く.
科学分野:
- 凝縮物質物理学 凝縮物質物理学
- マテリアルサイエンス 材料科学
- ナノテクノロジー ナノテクノロジー
背景:
- 炭素ナノチューブフィールド効果トランジスタ (FET) は,ユニークな電子特性を提供します.
- ナノデバイスからの光学放射を調査することは,統合フォトニクスにとって極めて重要です.
- ドーピングされていないナノチューブの電荷キャリアの振る舞いを理解することは,デバイスアプリケーションの鍵です.
研究 の 目的:
- 炭素ナノチューブアンビポラーFETからの偏光赤外線光学放射を調査する.
- 化学的ドーピングなしでナノチューブに光学的に活性な接点を作成するための新しい方法を実証する.
- 超小型統合フォトニック装置としてのこのシステムの可能性を探求する.
主な方法:
- 炭素ナノチューブアンビポラーFETの製造と電気的特徴.
- 特定の電気バイアス条件下での偏光赤外線光学放射の測定.
- デバイスの物理および電気データに基づく排出メカニズムの分析.
主要な成果:
- FET.カーボンナノチューブから観測された偏光赤外線光学放射.
- 化学ドーパントなしで,電気バイアスを介して,効果的な前向きバイアス p-n 交差点の作成が実証されました.
- 光学放射は,同時に注入された電子とナノチューブの穴の放射性再結合に起因する.
- 接触点におけるショットキー・バリアを含むモデルで検証された観測.
結論:
- 炭素ナノチューブFETは,新しい光学再結合放射線源として機能することができます.
- 実証されたデバイスアーキテクチャは,電子と穴の注入をフィールドフリーに近い領域に可能にします.
- この技術は,超小型統合フォトニックデバイスの開発に有望である.
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