シリコンの何ナノメートルの厚さのチタンの炭酸ガスの層を通って水素の拡散のスペクトロスコーピーの証拠
Semyon Bocharov1, Andrew V Teplyakov
1Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716, USA.
Journal of the American Chemical Society
|June 12, 2003
まとめ
タイタン炭化水素 (TiCN) の薄膜を通して原子水素の拡散が研究されました. TiCN層は,チタンベースの拡散バリアが通常失敗する温度で水素脱吸収を示し,TiCNバリアの潜在的な制限を示した.
科学分野:
- 材料科学 材料科学とは
- 表面科学とは,地表科学である.
- 化学工学は化学工学というものです.
背景:
- 炭化チタン (TiCN) は,半導体デバイスの拡散バリアの有望な材料です.
- TiCNによる水素拡散の理解は,デバイスの信頼性と性能にとって非常に重要です.
- 既存のTiベースの拡散バリアは,特定の温度範囲内でしばしば失敗します.
研究 の 目的:
- 薄いTiCN層を通して原子水素の拡散を調査する.
- 水素曝露下でTiCN/Siインターフェースの振る舞いを決定する.
- 拡散バリアとしてのTiCNの熱安定性と有効性を評価する.
主な方法:
- 多重内反射フーリエ変換赤外線スペクトロスコーピー (MIR-FTIR) が採用されました.
- 他の補完的な分析手法も利用された.
- 化学蒸気堆積 (CVD) は,テトラキス・ディメチラミノ・チタニウムからTiCN層をSi100−2x1表面に堆積するために使用されました.
主要な成果:
- 10nm厚のTiCN層を通る原子水素の拡散を成功裏にモニタリングしました.
- TiCN/Siインターフェイスから水素の再結合性脱吸収が観察されました.
- 水素脱吸収温度範囲は,ほとんどのTiベースの拡散バリアの故障点と一致しました.
結論:
- TiCN/Siインターフェースは,臨界温度で水素脱吸収を示します.
- この発見は,TiCNがこれらの温度にさらされるアプリケーションでは適切な拡散バリアではないことを示唆しています.
- より堅固な拡散バリア材料を開発するためにさらなる研究が必要である.
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