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Updated: Jul 19, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

PbSe量子ドットフィルムに電子と穴の注入

Brian L Wehrenberg1, Philippe Guyot-Sionnest

  • 1James Franck Institute, The University of Chicago, 5640 South Ellis Avenue, Chicago, IL 60637, USA.

Journal of the American Chemical Society
|June 26, 2003
PubMed
まとめ

研究者は電気化学的方法を使用して,電子と穴を鉛セレニド (PbSe) 半導体ナノ結晶に注入しました. この電荷注入は,赤外線吸収スペクトルの変化を観測することによって確認され,量子的に閉じ込められた状態に対する制御が実証されました.

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P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...