La2@C80金属フルレレンの伝導性とフィールド効果トランジスタ
Shin-ichiro Kobayashi1, Satoshi Mori, Satoru Iida
1Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.
Journal of the American Chemical Society
|July 3, 2003
まとめ
ランタン二金属フルフルレン (La2@C80) でフィールド効果トランジスタの動作を演示します. n型半導体の振る舞いは,カプセル化されたLaイオンによるキャリア伝導を示唆し,低流動性はホッピングメカニズムを示唆する.
科学分野:
- マテリアルサイエンス 材料科学
- 凝縮物質物理学 凝縮物質物理学
- ナノテクノロジー ナノテクノロジー
背景:
- ディメタロフルレンは,潜在的な電子アプリケーションを持つ新しい炭素ケージ化合物です.
- ランタン二金属フルフルレン (La2@C80) は,封じ込められた金属イオンによりユニークな電子特性を有しています.
研究 の 目的:
- La2@C80.0.のフィールドエフェクトトランジスタ (FET) の性能を調査する.
- La2@C80薄膜における電荷輸送メカニズムを解明する.
主な方法:
- La2@C80.0.を使用した薄膜装置の製造
- 高真空および室温条件下でのデバイスの性能の特徴.
- 半導体のタイプとモビリティを決定するために,電気輸送特性の分析.
主要な成果:
- La2@C80のFET操作をイコサヘドラルケージ対称性で実証しました.
- 観察されたn型半導体の動作は1.1 x 10^-4 cm^2/V s.の可動性を持つ.
- 最も低い空の分子軌道 (LUMO) と相互作用するカプセル化されたランタニウムイオンにn型伝導性がある.
結論:
- La2@C80は,トランジスタアプリケーションに適したn型半導体特性を示しています.
- 低機動性は,分子間ジャンプ輸送機構を示唆しています.
- 内在的および外在的要因に対処することによって,移動性を最適化するためにさらなる研究が必要です.
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