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Updated: Jul 25, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

ナノポーラス単一結晶における高密度の電子アニオン: [Ca24Al28O64]4+(4e-)

Satoru Matsuishi1, Yoshitake Toda, Masashi Miyakawa

  • 1Hosono Transparent and Electro-Active Materials Project, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology Corporation, KSP C-1232, 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012, Japan.

Science (New York, N.Y.)
|August 2, 2003
PubMed
まとめ

研究者は,12CaO.7Al2O3.3から酸素イオンを取り除き,安定した単結晶電極を作り出した. これにより,高伝導性,アニオン状の電子が結晶構造の中で生成され,新しい材料が形成されました.

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Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis07:24

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Electron Configuration of Multielectron Atoms

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