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Updated: Jul 12, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

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バリスティックカーボンナノチューブフィールド効果トランジスタ

Ali Javey1, Jing Guo, Qian Wang

  • 1Department of Chemistry, Stanford University, California 94305, USA.

Nature
|August 9, 2003
PubMed
まとめ

研究者は,パラジウムコンタクトを使用した単一壁の炭素ナノチューブフィールド効果トランジスタのショットキー障壁を最小限に抑えた. このブレークスルーにより,近距離弾道輸送と高度な電子機器のための高電流能力が可能になる.

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