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Updated: Jun 30, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

形のないMoS3の構造をモデル化:中性子 difraktionと逆モンテカルロ研究をモデル化

Simon J Hibble1, Glenn B Wood

  • 1School of Chemistry, University of Reading, Reading RG6 6AD, UK. s.j.hibble@rdg.ac.uk

Journal of the American Chemical Society
|January 22, 2004
PubMed
まとめ

研究者は,逆モンテカルロ法を使用して,無形モリブデン三硫化物 (a-MoS3) の新しい構造モデルを開発しました. この現実的なモデルは,ニュートロン difraktion データに正確に適合し,以前のクラスターベースのモデルを改良しています.

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Valence Bond Theory02:42

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