関連する実験動画
Updated: Jun 26, 2026
14:58
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
金属酸化物半導体電容器をベースにした高速シリコン光学変調器
Ansheng Liu1, Richard Jones, Ling Liao
1Intel Corporation, 2200 Mission College Blvd, CHP3-109, Santa Clara, California 95054, USA. ansheng.liu@intel.com
Nature
|February 13, 2004
まとめ
研究者らは,金属酸化物半導体電容器を用いた高速シリコン光学変調器を開発した. このブレークスルーにより,1GHz以上の変調帯域幅を達成し,シリコンフォトニクスの以前の速度制限を克服しました.
科学分野:
- フォトニクスと光電子学
- マテリアルサイエンス 材料科学
- 電気工学 電気工学とは
背景:
- シリコンはエレクトロニクスにおける支配的な材料ですが,光学モデュレータが遅いため,フォトニクスにおける課題に直面しています.
- 既存のシリコン波導体調節器は~20MHzに限定されており,高速電子機器との統合を妨げています.
- III-V半導体とリチウムニオバートは,より高速な調節を提供するが,シリコンの統合能力は欠けている.
研究 の 目的:
- シリコンを用いた高速光学変調器を開発する.
- 現在のシリコンフォトニックデバイスの速度制限を克服するために.
- CMOSエレクトロニクスと光学調節器の単体統合を可能にする.
主な方法:
- メタル・オキシード・セミコンダクター (MOS) コンデンサの構造を用いて,全シリコン光学モジュールが設計されました.
- MOS電容器は,光学相調節を促進するために,シリコン波導体の中に埋め込まれていました.
- デバイスの性能は,モデュレーション帯域幅について実験的に評価されました.
主要な成果:
- 1GHzを超える変調帯域幅を持つ全シリコン光学変調器を実証しました.
- 以前のシリコン波導体調節器 (~20MHz) に比べて,著しく高い速度を達成しました.
- 実証されたモジュレーターは,補完的な金属酸化物半導体 (CMOS) 処理と互換性があります.
結論:
- 開発されたMOS電容器ベースのシリコン調節器は,高速フォトニックアプリケーションの実行可能なソリューションを提供します.
- この技術は,高度な光学機能をシリコンチップに直接統合する道を開く.
- 先進的な電子統合を備えた高性能で費用対効果の高いシリコンフォトニックデバイスの作成を可能にします.
関連する概念動画
01:24Metal-Semiconductor Junctions
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
01:27Biasing of Metal-Semiconductor Junctions
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
01:16MOSFET
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
In an n-MOSFET, the structure includes n-type source and drain...
01:17Characteristics of MOSFET
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
01:25MOS Capacitor
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
01:22MOSFET: Enhancement Mode
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...