関連する実験動画

Updated: Jul 17, 2026

Concurrent Quantitative Conductivity and Mechanical Properties Measurements of Organic Photovoltaic Materials using AFM
08:59

Concurrent Quantitative Conductivity and Mechanical Properties Measurements of Organic Photovoltaic Materials using AFM

Published on: January 23, 2013

有機薄膜トランジスタ用の高性能半導体ポリチオフェン

Beng S Ong1, Yiliang Wu, Ping Liu

  • 1Materials Design and Integration Laboratory, Xerox Research Centre of Canada, Mississauga, Ontario, Canada L5K 2L1. beng.ong@crt.xerox.com

Journal of the American Chemical Society
|March 18, 2004
PubMed
まとめ

研究者らは,有機薄膜トランジスタ (TFT) のための空気安定液晶レジオレギュラーポリチオフェン (PQT) を開発した. これらのPQTは,空気で製造された高性能トランジスタを可能にし,低コストの有機電子工学を進歩させています.

さらに関連する動画

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

Morphology Control for Fully Printable Organic–Inorganic Bulk-heterojunction Solar Cells Based on a Ti-alkoxide and Semiconducting Polymer08:29

Morphology Control for Fully Printable Organic–Inorganic Bulk-heterojunction Solar Cells Based on a Ti-alkoxide and Semiconducting Polymer

Published on: January 10, 2017

関連する概念動画

Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...