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Updated: Aug 11, 2026

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
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Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain

Published on: March 27, 2018

新しい熱電気材料:CsBi4Te6

Duck-Young Chung1, Tim P Hogan, Melissa Rocci-Lane

  • 1Department of Chemistry and Center for Fundamental Materials Research, Michigan State University, East Lansing, Michigan 48824, USA.

Journal of the American Chemical Society
|May 20, 2004
PubMed
まとめ

セシウムビスムートテルリド (CsBi4Te6) は,狭間半導体である. ドーピングは,低温アプリケーションのためにその熱電気的性質を最適化し,SbI3とSbドーピングで有望な結果を示しています.

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