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Updated: May 12, 2026

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
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エピタキシアル (Ga,Mn) Asマイクロデバイスにおける個々のドメイン壁の負の内在抵抗性

H X Tang1, S Masmanidis, R K Kawakami

  • 1Condensed Matter Physics 114-36, California Institute of Technology, Pasadena, California 91125, USA.

Nature
|September 3, 2004
PubMed
まとめ

研究者は,鉄磁性半導体内の個々の磁域壁 (DWs) が一貫して電気抵抗を低下させることを発見しました. (Ga,Mn) Asにおけるこの発見は,スピントロニックデバイスに関する洞察を提供します.

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