炭素ナノチューブの原子衝突による抵抗性

Hugo E Romero¹, Kim Bolton, Arne Rosén

¹Department of Physics, Pennsylvania State University, University Park, PA 16802, USA.

Science (New York, N.Y.)

|January 8, 2005

まとめ

ガス原子との衝突は,炭素ナノチューブの電子輸送を大幅に変化させます. 抵抗と熱力のこれらの変化は,ガス原子に依存しています.

科学分野:

マテリアルサイエンス材料科学
凝縮物質物理学凝縮物質物理学
ナノテクノロジーナノテクノロジー

背景:

シングルウォールカーボンナノチューブ (SWCNTs) は,ユニークな電気特性を有しています.
SWCNTにおける電子輸送に影響を及ぼす要因を理解することは,デバイスアプリケーションにとって極めて重要です.

研究の目的:

原子衝突が金属SWCNTにおける電子伝送に与える影響を調査する.
衝突するガス種の特性と観測された輸送の変化との関係を特定する.

主な方法:

SWCNT薄膜における抵抗と熱力の変化の実験観察.
ナノチューブ-ガス原子相互作用をモデル化するための分子動力学シミュレーション.
衝突するガス種 (He, Ar, Ne, Kr, Xe, CH4, N2) の体系的な変化.

主要な成果:

ガス原子と衝突した際のSWCNT電子伝送の強力で系統的な変化が観察されました.
電気輸送の変化 (抵抗,熱力) は,衝突したガス質量 (M(1/3) の立方根でスケールされます.
シミュレーションでは,ナノチューブの変形とエネルギー伝達も,M (−1) /3) の依存性を示すことが示されました.

結論:

炭素ナノチューブの壁の一時的な変形 (デント) は,電子伝送の変化の原因である可能性が高い.
観測された現象を説明するために,原子衝突によって誘発された新しい分散機構が提案されています.
この発見は,SWCNT-ガス相互作用とその電気特性への影響に関する新しい洞察を提供します.

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