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Updated: Jul 14, 2026

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
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結合結合電子伝送プロセス:ジサイレンのSi-Si結合の割れ方

Rabih O Al-Kaysi1, Joshua L Goodman

  • 1Department of Chemistry, University of Rochester, Rochester, NY 14627, USA.

Journal of the American Chemical Society
|February 11, 2005
PubMed
まとめ

光酸化は,トリプルセンシタイザーを用いて,テトラブチルディフェニルジジランの誘導体におけるシリコン-シリコン結合を効率的に割ります. ディソシエティブ・リターン電子転送 (DRET) が提案されたメカニズムであり,シランの断片化のための新しい戦略を提供します.

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