関連する実験動画

Updated: Aug 18, 2026

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

bis-5'-alkylthiophen-2'-yl-2,6-anthracene半導体ベースの高性能,安定した有機薄膜フィールド効果トランジスタ

Hong Meng1, Fangping Sun, Marc B Goldfinger

  • 1Central Research and Development, Experimental Station, E. I. DuPont Company, Wilmington, Delaware 19880-0328, USA. hong.meng@usa.dupont.com

Journal of the American Chemical Society
|February 24, 2005
PubMed
まとめ

研究者らは,電気性能と安定性を向上させるための新しい有機半導体を開発した. これらの材料は,高い流動性とオン/オフ比を示し,長期保存および使用後でも性能を維持します.

さらに関連する動画

Well-aligned Vertically Oriented ZnO Nanorod Arrays and their Application in Inverted Small Molecule Solar Cells09:32

Well-aligned Vertically Oriented ZnO Nanorod Arrays and their Application in Inverted Small Molecule Solar Cells

Published on: April 25, 2018

Solution-Processed "Silver-Bismuth-Iodine" Ternary Thin Films for Lead-Free Photovoltaic Absorbers10:19

Solution-Processed "Silver-Bismuth-Iodine" Ternary Thin Films for Lead-Free Photovoltaic Absorbers

Published on: September 27, 2018

関連する概念動画

Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational characteristics.
The structure...
Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...