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オーガニック半導体におけるn型フィールド効果の振る舞いの一般的な観察

Lay-Lay Chua¹, Jana Zaumseil, Jui-Fen Chang

¹Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, UK.

|March 11, 2005

まとめ

研究者は,ヒドロキシルフリーゲート介電器を使用して,有機半導体でn型伝導を達成しました. このブレークスルーにより,電子トラップの問題が克服され,高度な有機電子機器の電子の移動性が向上します.

科学分野:

マテリアルサイエンス材料科学
オーガニック・エレクトロニクス
半導体物理学半導体物理学

背景:

オーガニック半導体は,ディスプレイやプリント可能な回路などの新興アプリケーションに不可欠です.
通常,有機フィールド効果トランジスタ (FET) は,強い電子トラッピングによりp型伝導性を示し,n型性能を制限します.
既存のn型有機半導体は希少で,多くの場合,特定の高電子親和度または低帯域ギャップの材料を必要とします.

研究の目的:

nチャネルフィールド効果トランジスタ (FET) の伝導を,より広い範囲の結合ポリマーで実証する.
オーガニックFETでn型伝導を実現する歴史的な困難の主な原因を特定する.
有機的な補完的な金属酸化物半導体 (CMOS) 回路の開発を可能にするために.

主な方法:

ハイドロキシルフリーゲート介電器,特にディビニルテトラメチルシロキサン-ビス (ベンゾサイクロブテン) デリバティブ (BCB) を使用しました.
新しい介電器で様々な結合ポリマーを使用して,有機FETを製造し,特徴づけました.
半導体-流電界面での電子トラップメカニズムを調査した.

主要な成果:

BCBダイエレクトリックを使用して,ほとんどの結合ポリマーでnチャネルFET伝導を達成しました.
測定された有意な電子移動 (10^-3から10^-2cm^2V^-1s^-1) は,ポリフルオレン共ポリマーとダイアルキル置換ポリ (p-フェニレンビニレン) で測定された.
電子の捕獲の主な原因として,従来のSiO2介電材料の水素基 (シラノール) を特定しました.

結論:

ハイドロキシルフリーゲート介電剤の使用は,有機半導体におけるn型伝導を解き放つための鍵です.
これらの材料における電子の移動性は,これまで考えられていたよりも高い.
この研究は,p型とn型の両方の機能性を活用した実用的な有機CMOS回路の道を開く.

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