関連する実験動画

Updated: Jul 6, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

大面積の液晶モノドメインフィールド効果トランジスタ

Albert J J M van Breemen1, Peter T Herwig, Ceciel H T Chlon

  • 1TNO Science and Industry, De Rondom 1, P. O. Box 6235, 5600 HE Eindhoven, The Netherlands. albert.vanbreemen@tno.nl

Journal of the American Chemical Society
|February 16, 2006
PubMed
まとめ

研究者は液晶有機半導体を合成し,それらを自己組み立てフィルムに加工した. モノドメインの形成は,フィールド効果トランジスタにおける電荷キャリアの移動性を大幅に強化し,十倍の増加を達成しました.

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関連する概念動画

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...