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Published on: December 14, 2011
シリコン表面の変位付近のステップの異常な螺旋運動
J B Hannon1, V B Shenoy, K W Schwarz
1IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598, USA. jbhannon@us.ibm.com
まとめ
私たちは,シリコン表面の変位付近で明確なステップモーションを観察しました. Si(111) は古典的な螺旋的な成長を示したが,Si(001) は変位ストレンスフィールドによって説明される異常な行動を示した.
科学分野:
- マテリアルサイエンス 材料科学
- 表面科学とは,地表科学である.
- 固体物理 固体物理学
背景:
- 結晶の成長メカニズムを理解することは,半導体製造において極めて重要です.
- 結晶格子における変位は,表面形態学と成長動態に大きな影響を与える可能性があります.
- バートン,カブレラ,フランク理論のような以前のモデルは,理想的な表面上のステップモーションを説明しています.
研究 の 目的:
- 変位の存在下で,Si(111) とSi(001) の表面上のステップ運動を調査し,比較する.
- 脱位核の近くにあるSi(001) に観察された異常なステップの振る舞いを解明するために.
- ダイナミックなステップフローパターンを,変位ストレスのフィールドとスリップシステムと相関させるため.
主な方法:
- 低エネルギー電子顕微鏡 (LEEM) を使用して,ステップダイナミクスを視覚化および測定します.
- 水晶の成長と亜鉛化過程の両方で実験を行う.
- ステップ速度に対する変位によって生成される張力場の影響を分析する.
主要な成果:
- 観測された古典的な回転アーキメデスの螺旋的なステップ運動は,理論的な予測と一致しています.
- 異なった異なった異なった異様なステップ運動が,Si (001) 上の異動の近くで記録されています.
- 変位による非均一な張力場が,Si(001) 上の局所的なステップ速度を決定することを実証した.
結論:
- Si(001) 上のステップの動位付近の行動は,ストレスの影響により標準モデルから逸脱する.
- Si ((001) 上の観測された異常な動きは,局所的な張力場と,変位の滑り系と直接関連しています.
- LEEMは,半導体における脱位媒介による表面現象を研究するための強力なツールを提供します.
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