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Updated: Jul 19, 2026

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

低動作電圧の高性能有機フィールド効果トランジスタ用の1-イミノ窒素ピレン

Ying Wang1, Hongmei Wang, Yunqi Liu

  • 1Key Laboratory of Organic Solids, Center for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, China.

Journal of the American Chemical Society
|October 5, 2006
PubMed
まとめ

1-イミノ酸化窒素ピレンフィルムを使用した有機フィールド効果トランジスタ (OFET) は,高い性能を示しています. これらのOFETは,優れたp型特性,低動作電圧,そして高度な電子アプリケーションのための印象的な可動性を示しています.

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