ドーピングされた立方シリコンの超伝導性
E Bustarret1, C Marcenat, P Achatz
1Laboratoire d'Etudes des Propriétés Electroniques des Solides, CNRS, BP166, 38042 Grenoble, France. etienne.bustarret@grenoble.cnrs.fr
Nature
|November 24, 2006
まとめ
超伝導性は,高濃度のボールを導入することにより,初めてシリコンで達成されました. このブレークスルーにより,新しいシリコンベースの超伝導ナノ構造とデバイスの開発が可能になります.
科学分野:
- 凝縮物質物理学 凝縮物質物理学
- マテリアルサイエンス 材料科学
- 半導体物理学 半導体物理学
背景:
- シリコンの抵抗性はドーピングで調節可能ですが,超伝導性は観察されていません.
- シリコンと超伝導体を統合したハイブリッドデバイスは未開発です.
研究 の 目的:
- シリコンに超伝導性を誘導するために.
- シリコンベースの超伝導ナノ構造と装置の探索.
主な方法:
- ガス浸透レーザードーピングは,シリコンに高濃度のボールを達成する.
- 電気抵抗性と磁気感受性の測定. 電気抵抗性と磁気感受性の測定.
- アブ・イニシオ計算とラマン光譜法.
主要な成果:
- ボロン添加シリコン (Si:B) で誘導された超伝導性は,約0.35Kの移行温度 (T ((c)) で誘導されます.
- 約0.4Tの臨界磁場が観測されました.
- ドーピングは代替として確認され,従来のフォノン媒介のカップリングメカニズムを使用した.
結論:
- 高濃度のボロンドーピングは,シリコンの超伝導性を可能にします.
- この研究は,シリコンベースの超伝導ナノ構造と,高品質なインターフェースを持つメソスコピックデバイスの発展に道を開く.
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