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Updated: May 10, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 2, 2013

強く結合した単一の量子ドット・キャビティ・システムの量子性質

K Hennessy1, A Badolato, M Winger

  • 1Institute of Quantum Electronics, ETH Zürich, HPT G10, 8093 Zurich, Switzerland.

Nature
|January 30, 2007
PubMed
まとめ

この研究は,単一の量子ドットと光子結晶ナノキャビティを使用して,固体腔量子電動力学 (QED) の量子相関を実証しています. これは,量子情報処理システムの量子的性質を確認している.

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