Science (New York, N.Y.)
|August 19, 1988
PubMed
まとめ

イオンインプラントは,通常の溶解性限界を超えた元素をシリコンに導入し,ユニークな埋葬された酸化物およびシリシド層を作成することができます. この非均衡プロセスは,従来の方法では達成できない新しい材料特性を提供します.

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