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絶え間ないNiFe-Ag多層薄膜における低場における巨大な磁気抵抗
Science (New York, N.Y.)
|August 20, 1993
まとめ
ニフェー-アグの多層の解熱は,ニフェー層の破裂による巨大磁気抵抗 (GMR) を誘導した. この効果は,低磁場磁気センサーの可能性を示しています.
科学分野:
- マテリアルサイエンス 材料科学
- 凝縮物質物理学 凝縮物質物理学
- ナノテクノロジー ナノテクノロジー
背景:
- 巨大磁気抵抗 (GMR) は,多層構造で観測される量子力学的磁気抵抗効果である.
- GMR効果は,薄膜の磁性および構造特性に敏感です.
研究 の 目的:
- ニッケル・鉄 (NiFe) ・銀 (Ag) の多層構造における巨大な磁気抵抗 (GMR) 効果を調査する.
- NiFe-AgフィルムのGMR特性に対するアニリングの影響を決定する.
主な方法:
- 異なるNiFeとAgの厚さを持つNiFe-Agマルチレイヤのスプッタリング堆積.
- 準備された複数の層のフィルムの光処理.
- 適用された磁場における室温での磁気抵抗の測定.
主要な成果:
- 精錬されていないNiFe-Agフィルムでは,有意なGMRは観察されなかった.
- 解熱は低磁場 (5〜10 Oe) で大きく,負のGMR (4〜6%) を誘導した.
- GMRの出現は,磁気静的相互作用に起因するNiFe層の崩壊と相関していた.
結論:
- 解熱は,NiFe-Agの多層層にGMRを誘導するために不可欠です.
- 観測されたGMRは,多層の構造変化と磁気配列に関連しています.
- これらの材料は,磁気抵抗性読み取りヘッドなどの低磁場磁気センサーのアプリケーションの有望性を示しています.
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