関連する実験動画

Updated: Jul 12, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

固体ゲルマニウムの新しい密度の高い形

F P Bundy, J S Kasper

    Science (New York, N.Y.)
    |January 25, 1963
    PubMed
    まとめ

    研究者は,立方体ゲルマニウムに高圧を加えることで,新しい,より密度の高い固体ゲルマニウムを作り出した. この四角形のゲルマニウム半導体は,200°C以上で立方体に戻ります.

    さらに関連する動画

    Synthesis of Nine-atom Deltahedral Zintl Ions of Germanium and their Functionalization with Organic Groups08:15

    Synthesis of Nine-atom Deltahedral Zintl Ions of Germanium and their Functionalization with Organic Groups

    Published on: February 11, 2012

    Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition09:45

    Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition

    Published on: July 26, 2016

    関連する概念動画

    Types of Semiconductors01:20

    Types of Semiconductors

    Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
    Semiconductors01:22

    Semiconductors

    There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
    Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
    Network Covalent Solids02:18

    Network Covalent Solids

    Network covalent solids contain a three-dimensional network of covalently bonded atoms as found in the crystal structures of nonmetals like diamond, graphite, silicon, and some covalent compounds, such as silicon dioxide (sand) and silicon carbide (carborundum, the abrasive on sandpaper). Many minerals have networks of covalent bonds.
    To break or to melt a covalent network solid, covalent bonds must be broken. Because covalent bonds are relatively strong, covalent network solids are typically...
    Fermi Level Dynamics01:12

    Fermi Level Dynamics

    The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
    Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
    The work...
    Energy Bands in Solids01:01

    Energy Bands in Solids

    Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
     Band Formation:
    When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states that no two...
    Gauss's Law in Dielectrics01:17

    Gauss's Law in Dielectrics

    Consider a polar dielectric placed in an external field. In such a dielectric, opposite charges on adjacent dipoles neutralize each other, such that the net charge within the dielectric is zero. When a polar dielectric is inserted in between the capacitor plates, an electric field is generated due to the presence of net charges near the edge of the dielectric and the metal plates interface. Since the external electrical field merely aligns the dipoles, the dielectric as a whole is neutral. An...