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Updated: Jul 12, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

ガリウムアルセナイドトランジスタ:分子的に設計された断熱器を介して実現

P P Jenkins, A N Macinnes, M Tabib-Azar

    Science (New York, N.Y.)
    |March 25, 1994
    PubMed
    まとめ

    研究者は,立方体ガリウム硫化物 (GaS) を絶縁体として使用した新しいガリウムアルセニド (GaAs) トランジスタを開発しました. この新しいデバイスは,商用シリコントランジスタに匹敵する高性能を示しています.

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