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Updated: Jul 12, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

高圧で作られた高温立方ボロンニトリドp-N交差点ダイオード

O Mishima, J Tanaka, S Yamaoka

    Science (New York, N.Y.)
    |October 9, 1987
    PubMed
    まとめ

    研究者らは,立方ボロンニトリドp-n結合ダイオードを開発した. この高温半導体装置は,530°Cまで安定した動作を証明し,極端な環境への潜在能力を示しています.

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