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Updated: Jul 12, 2026

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
06:44

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing

Published on: June 9, 2023

放射能の影響とシリケートの酸素の空白

A Chatelain, J L Kolopus, R A Weeks

    Science (New York, N.Y.)
    |May 1, 1970
    PubMed
    まとめ

    陽子と電子の放射線は,シリケート材料に特定のパラ磁性欠陥を生じさせます. SiO(4) 構造に共通するこの欠陥は,破裂や電流放電によって材料の侵食を引き起こす可能性があります.

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